Formation method of semiconductor device with gate spacer

ABSTRACT

A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate. The method also includes forming a sealing layer over a sidewall of the gate stack using an atomic layer deposition process. The atomic layer deposition process includes alternately and sequentially introducing a first silicon-containing precursor gas and a second silicon-containing precursor gas over the sidewall of the gate stack to form the sealing layer. The second silicon-containing precursor gas has a different atomic concentration of carbon than that of the first silicon-containing precursor gas. The method further includes partially removing the sealing layer to form a sealing element over the sidewall of the gate stack.

PRIORITY CLAIM AND CROSS-REFERENCE

This Application claims the benefit of U.S. Provisional Application No.62/589,231, filed on Nov. 21, 2017, the entirety of which isincorporated by reference herein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs. Each generation has smaller and more complexcircuits than the previous generation.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling-downprocess generally provides benefits by increasing production efficiencyand lowering associated costs.

However, these advances have increased the complexity of processing andmanufacturing ICs. Since feature sizes continue to decrease, fabricationprocesses continue to become more difficult to perform. Therefore, it isa challenge to form reliable semiconductor devices at smaller andsmaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a perspective view of an intermediate stage of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIGS. 2A-2I are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 3 is a flow chart of a method for forming a material layer using anatomic layer deposition process, in accordance with some embodiments.

FIG. 4 is a cross-sectional view of a portion of a sealing element or aspacer element of a semiconductor device structure, in accordance withsome embodiments.

FIG. 5 is a cross-sectional view of a portion of a sealing element or aspacer element of a semiconductor device structure, in accordance withsome embodiments.

FIG. 6 is a cross-sectional view of a portion of a sealing element of asemiconductor device structure, in accordance with some embodiments.

FIG. 7 shows a process chamber for performing an atomic layer depositionprocess, in accordance with some embodiments.

FIG. 8A is a flow chart of a method for forming a material layer usingan atomic layer deposition process, in accordance with some embodiments.

FIG. 8B is a flow chart of a method for forming a material layer usingan atomic layer deposition process, in accordance with some embodiments.

FIGS. 9A-9C are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. Additional operationscan be provided before, during, and/or after the stages described inthese embodiments. Some of the stages that are described can be replacedor eliminated for different embodiments. Additional features can beadded to the semiconductor device structure. Some of the featuresdescribed below can be replaced or eliminated for different embodiments.Although some embodiments are discussed with operations performed in aparticular order, these operations may be performed in another logicalorder.

Embodiments of the disclosure may relate to a FinFET structure havingfins. The fins may be patterned by any suitable method. For example, thefins may be patterned using one or more photolithography processes,including double-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in someembodiments, a sacrificial layer is formed over a substrate andpatterned using a photolithography process. Spacers are formed alongsidethe patterned sacrificial layer using a self-aligned process. Thesacrificial layer is then removed, and the remaining spacers may then beused to pattern the fins. However, the fins may be formed using one ormore other applicable processes.

FIG. 1 is a perspective view of an intermediate stage of a process forforming a semiconductor device structure, in accordance with someembodiments. In some embodiments, FIG. 1 shows an intermediate stage forforming a fin field-effect transistor (FinFET).

FIGS. 2A-2I are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments. In some embodiments, the structure shown in FIG. 2Acorresponds to a cross-sectional view taken along the line I-I ofFIG. 1. As shown in FIG. 2A, a semiconductor substrate 100 is receivedor provided.

In some embodiments, the semiconductor substrate 100 is a bulksemiconductor substrate, such as a semiconductor wafer. For example, thesemiconductor substrate 100 includes silicon or other elementarysemiconductor materials such as germanium. The semiconductor substrate100 may be un-doped or doped (e.g., p-type, n-type, or a combinationthereof). In some other embodiments, the semiconductor substrate 100includes a compound semiconductor. The compound semiconductor mayinclude silicon carbide, gallium arsenide, indium arsenide, indiumphosphide, one or more other suitable compound semiconductors, or acombination thereof. In some embodiments, the semiconductor substrate100 is an active layer of a semiconductor-on-insulator (SOI) substrate.The SOI substrate may be fabricated using a separation by implantationof oxygen (SIMOX) process, a wafer bonding process, another applicablemethod, or a combination thereof. In some other embodiments, thesemiconductor substrate 100 includes a multi-layered structure. Forexample, the semiconductor substrate 100 includes a silicon-germaniumlayer formed on a bulk silicon layer.

As shown in FIG. 1, multiple recesses (or trenches) are formed in thesemiconductor substrate 100, in accordance with some embodiments. As aresult, multiple fin structures 102 are formed or defined between therecesses. In some embodiments, one or more photolithography and etchingprocesses are used to form the recesses. In FIG. 2A, only one of the finstructures 102 is shown. In some embodiments, the fin structures 102 arein direct contact with the semiconductor substrate 100 since the finstructures 102 are originally continuous portions of the semiconductorsubstrate 100.

However, embodiments of the disclosure have many variations and/ormodifications. In some other embodiments, the fin structures 102 are notin direct contact with the semiconductor substrate 100. One or moreother material layers may be formed between the semiconductor substrate100 and the fin structures 102. For example, a dielectric layer may beformed over the semiconductor substrate 100 before the fin structures102 are formed.

As shown in FIG. 1, isolation features 103 are formed in the recesses tosurround lower portions of the fin structures 102, in accordance withsome embodiments. The isolation features 103 are used to define andelectrically isolate various device elements formed in and/or over thesemiconductor substrate 100. In some embodiments, the isolation features103 include shallow trench isolation (STI) features, local oxidation ofsilicon (LOCOS) features, another suitable isolation feature, or acombination thereof.

In some embodiments, a dielectric material layer is deposited over thesemiconductor substrate 100. The dielectric material layer covers thefin structures 102 and fills the recesses between the fin structures. Insome embodiments, the dielectric material layer is deposited using achemical vapor deposition (CVD) process, an atomic layer deposition(ALD) process, a physical vapor deposition (PVD) process, a spin-onprocess, one or more other applicable processes, or a combinationthereof. In some embodiments, a planarization process is used to thindown the dielectric material layer until the fin structures 102 or hardmask elements defining the fin structures are exposed. The planarizationprocess may include a chemical mechanical polishing (CMP) process, agrinding process, a dry polishing process, an etching process, one ormore other applicable processes, or a combination thereof. Afterwards,the dielectric material layer is etched back so that the fin structures102 protrude from the top surface of the remaining dielectric materiallayer after the etching process. As a result, the remaining portions ofthe dielectric material layer form the isolation features 103, as shownin FIG. 1.

Afterwards, a gate stack 107 is formed over the semiconductor substrate100 to partially cover the fin structures 102, as shown in FIGS. 1 and2A in accordance with some embodiments. As shown in FIGS. 1 and 2A, thegate stack 107 includes a gate electrode 106 and a gate dielectric layer104. In some embodiments, the gate stack 107 is a dummy gate stack whichmay be replaced with another gate stack, such as a metal gate stack.

In some embodiments, a gate dielectric material layer and a gateelectrode layer are deposited over the isolation features 103 and thefin structures 102. In some embodiments, the gate dielectric materiallayer is made of or includes silicon oxide, silicon nitride, siliconoxynitride, dielectric material with a high dielectric constant(high-K), one or more other suitable dielectric materials, or acombination thereof. Examples of high-K dielectric materials includehafnium oxide, zirconium oxide, aluminum oxide, hafnium dioxide-aluminaalloy, hafnium silicon oxide, hafnium silicon oxynitride, hafniumtantalum oxide, hafnium titanium oxide, hafnium zirconium oxide, one ormore other suitable high-K materials, or a combination thereof. In someembodiments, the gate dielectric material layer is a dummy gatedielectric layer which will be removed subsequently. The dummy gatedielectric layer is, for example, a silicon oxide layer.

In some embodiments, the gate dielectric material layer is depositedusing a chemical vapor deposition (CVD) process, an atomic layerdeposition (ALD) process, a thermal oxidation process, a physical vapordeposition (PVD) process, one or more other applicable processes, or acombination thereof.

In some embodiments, the gate electrode layer is a dummy gate electrodelayer and is made of or includes a semiconductor material such aspolysilicon. For example, the dummy gate electrode layer is depositedusing a CVD process or another applicable process.

Afterwards, a patterned hard mask element (not shown) is formed over thegate electrode layer, in accordance with some embodiments. The patternedhard mask element is used to pattern the gate electrode layer and thegate dielectric material layer into one or more gate stacks. Afterwards,the gate electrode layer and the gate dielectric material layer areetched with the patterned hard mask element as an etching mask to formthe gate stacks including the gate stack 107, as shown in FIGS. 1 and 2Ain accordance with some embodiments.

As shown in FIG. 2B, a sealing layer 108 is deposited, in accordancewith some embodiments. The sealing layer 108 extends on the finstructure 102 and the top surface and sidewalls of the gate stack 107.The sealing layer 108 may be used to assist in a subsequent ionimplantation process for forming lightly-doped source and drain (LDS/D)regions.

In some embodiments, the sealing layer 108 is made of a dielectricmaterial. The dielectric material may include silicon oxycarbonitride,silicon carbide, silicon oxynitride, silicon nitride, silicon oxide, oneor more other suitable materials, or a combination thereof. The sealinglayer 108 may be deposited using a chemical vapor deposition (CVD)process. In some embodiments, the sealing layer 108 is deposited usingan atomic layer deposition (ALD) process. In subsequent processes, thesealing layer 108 may suffer an oxygen-involved etching process and/or awater-involved annealing process. In some embodiments, the sealing layer108 is formed to have strong oxidation-resistance terminal ligand. Thesealing layer 108 may be prevented from being oxidized and/or beinginserted water. Therefore, the sealing layer 108 may have a lowdielectric constant. As the density of semiconductor devices increasesand the size of circuit elements becomes smaller, the resistancecapacitance (RC) delay time increasingly dominates circuit performance.To keep the sealing layer 108 having a low dielectric constant may helpto improve the performance of the semiconductor device.

In some embodiments, two or more silicon-containing precursors aresequentially and alternatively used in the same process chamber forperforming an ALD process to form the sealing layer 108. One of thesilicon-containing precursors may contribute the formed sealing layer108 strong oxidation-resistance terminal ligands. Anothersilicon-containing precursor may allow the formed sealing layer 108 tohave a lower dielectric constant. Therefore, the sealing layer 108 mayhave a low dielectric constant and a high resistance to the subsequentoxygen-involved etching process and/or water-involved annealing process.

FIG. 3 is a flow chart of a method 300 for forming a material layerusing an atomic layer deposition process, in accordance with someembodiments. In some embodiments, the method 300 is used to form thesealing layer 108. FIG. 7 shows a process chamber 702 for performing anatomic layer deposition process, in accordance with some embodiments. Insome embodiments, the structure shown in FIG. 2A is transferred into theprocess chamber 702 for forming the sealing layer 108 by the method 300.In some embodiments, a first silicon-containing precursor gas and asecond silicon-containing precursor gas are alternatively andsequentially introduced into the process chamber 702 to form the sealinglayer 108.

In some embodiments, the method 300 includes an operation 302 in which afirst silicon-containing precursor gas is introduced over the sidewallof the gate stack 107. In some embodiments, the first silicon-containingprecursor gas is also applied on the top surface of the gate stack 107,the exposed surfaces of the fin structures 102, and/or the top surfacesof the isolation features 103. In some embodiments, the firstsilicon-containing precursor gas includes a silicon-halogen bonding(such as a silicon-chlorine bonding or a silicon-bromine bonding), asilicon-nitrogen bonding, a silicon-hydrogen bonding, or a combinationthereof. For example, the first silicon-containing precursor gas may beor include silicon chloride, silicon bromide, silicon iodide, silane,amino group containing silane, one or more other suitable or similarcompounds, or a combination thereof. In some other embodiments, thefirst silicon-containing precursor gas further includes a silicon-carbonbonding.

The first silicon-containing precursor gas may react with the surface ofa material one at a time in a sequential, self-limiting, manner. Theprecursor molecules may react with the surface of the gate stack 107 ina self-limiting way, so that the reaction terminates once the reactivesites on the surface of the gate stack 107 are consumed. In someembodiments, a sufficient reaction time is provided to ensure that allor almost all the reactive sites on the surface of the gate stack 107react with the precursor molecules and are consumed. Thesilicon-containing species from the first silicon-containing precursorgas may be adsorbed onto the surface of the gate stack 107 to form anatomic layer.

FIGS. 9A-9C are cross-sectional views of a process for forming asemiconductor device structure, in accordance with some embodiments. Insome embodiments, FIG. 9A is an enlarged cross-sectional view of thestructure shown in FIG. 2B. In some embodiments, silicon-containingspecies from the first silicon-containing precursor gas are adsorbedonto the surface of the gate stack 107 to form an atomic layer 902 a. Insome embodiments, the first silicon-containing precursor gas issubstantially free of carbon. Therefore, the atomic layer 902 a issubstantially free of carbon, in accordance with some embodiments. Oncethe reactive sites are completely or almost completely consumed, thegrowth of the atomic layer 902 a automatically terminates. The thicknessof the atomic layer 902 a may be a few angstroms. For example, thethickness of the atomic layer 902 a is in a range from about 2 Å toabout 10 Å. The excess portion of the first silicon-containing precursorgas would not chemically bond with the surface of the atomic layer 902 aafter the reactive sites are consumed. In some embodiments, the excessportion of the first silicon-containing precursor gas and/or reactionbyproducts are/is then removed from the process chamber 702 byintroducing a purge gas such as argon gas.

In some embodiments, the method 300 continues with an operation 304 inwhich one or more first modifying reactive media are introduced onto theatomic layer formed in the operation 302. For example, the one or morefirst modifying reactive media are introduced onto the atomic layer 902a shown in FIG. 9A. In some embodiments, the introduction of the one ormore first modifying reactive media includes introducing anoxygen-containing media, introducing a nitrogen-containing media, andintroducing a carbon-containing media. After multiple modificationoperations, the atomic layer 902 a is modified to include reactive sitescapable of reacting with subsequently introduced precursor gas, whichallows an atomic layer to be formed directly on the atomic layer 902 alater.

In some embodiments, an oxygen-containing media is introduced into theprocess chamber 702 to modify the atomic layer (such as the atomic layer902 a shown in FIG. 9A) formed in the operation 302. Theoxygen-containing media may include oxygen gas, oxygen-containingplasma, ozone, or the like. The oxygen-containing media may react withthe surface of the atomic layer 902 a in a self-limiting way, so thatthe reaction terminates once the reactive sites are consumed. After themodification of the oxygen-containing media, the atomic layer 902 a ismodified to include a silicon-oxygen (Si—O) bonding. For example, thesurface of the atomic layer 902 a includes a silicon-halogen bonding,and the silicon-halogen bonding may react with the oxygen-containingmedia to become the silicon-oxygen bonding. After the reactionterminates once the reactive sites are consumed, the excess portion ofthe oxygen-containing media and/or reaction byproducts are then removedfrom the process chamber 702, in accordance with some embodiments. Theexcess portion of the oxygen-containing media and/or reaction byproductsmay be removed by introducing a purge gas such as argon gas.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the oxygen-containing media isnot used.

In some embodiments, a nitrogen-containing media is then introduced intothe process chamber 702 to modify the atomic layer 902 a. Thenitrogen-containing media may include nitrogen gas, nitrogen-containingplasma, or the like. The nitrogen-containing media may react with thesurface of the oxygen-modified atomic layer 902 a in a self-limitingway, so that the reaction terminates once the reactive sites areconsumed. After the modification of the nitrogen-containing media, theatomic layer 902 a is modified to include a silicon-nitrogen (Si—N)bonding. After the reaction terminates once the reactive sites areconsumed, the excess portion of the nitrogen-containing media and/orreaction byproducts are then removed from the process chamber 702, inaccordance with some embodiments. The excess portion of thenitrogen-containing media and/or reaction byproducts may be removed byintroducing a purge gas such as argon gas.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the nitrogen-containing media isnot used.

In some embodiments, a carbon-containing media is then introduced intothe process chamber 702 to modify the atomic layer 902 a. Thecarbon-containing media may include methane, propane, ethane, or thelike. The carbon-containing media may react with the surface of thenitrogen-modified atomic layer 902 a in a self-limiting way, so that thereaction terminates once the reactive sites are consumed. After themodification of the carbon-containing media, the atomic layer 902 a maybe modified to include a nitrogen-carbon (N—C) bonding. After thereaction terminates once the reactive sites are consumed, the excessportion of the carbon-containing media and/or reaction byproducts arethen removed from the process chamber 702, in accordance with someembodiments. The excess portion of the carbon-containing media and/orreaction byproducts may be removed by introducing a purge gas such asargon gas.

Many variations and/or modifications can be made to embodiments of thedisclosure. The introducing order of the oxygen-containing media, thenitrogen-containing media, and the carbon-containing media may bevaried. In some other embodiments, the carbon-containing media is notused. In some other embodiments, no modifying reactive media is used.

In some embodiments, the method 300 continues with an operation 306 inwhich a second silicon-containing precursor gas is introduced over thesidewall of the gate stack 107. In some embodiments, the secondsilicon-containing precursor gas is also applied over the top surface ofthe gate stack 107, the fin structures 102, and/or the top surfaces ofthe isolation features 103. In some embodiments, the secondsilicon-containing precursor gas includes a silicon-halogen bonding(such as a silicon-chlorine bonding or a silicon-bromine bonding), asilicon-nitrogen bonding, a silicon-hydrogen bonding, or a combinationthereof. For example, the second silicon-containing precursor gas may beor include silicon chloride, silicon bromide, silicon iodide, silane,amino group containing silane, one or more other suitable or similarcompounds, or a combination thereof. In some other embodiments, thesecond silicon-containing precursor gas further includes asilicon-carbon (Si—C) bonding.

In some embodiments, the second silicon-containing precursor gas has adifferent atomic concentration of carbon than that of the firstsilicon-containing gas. In some embodiments, the secondsilicon-containing precursor gas has a greater atomic concentration ofcarbon than that of the first silicon-containing gas. In someembodiments, the first silicon-containing precursor gas substantiallycontains no carbon, and the second silicon-containing precursor gasincludes a silicon-carbon bonding.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the first silicon-containingprecursor gas has a greater atomic concentration of carbon than that ofthe second silicon-containing gas. In some other embodiments, the secondsilicon-containing gas is substantially free of carbon, and the firstsilicon-containing gas includes a silicon-carbon bonding.

In the operation 306, the second silicon-containing precursor gas mayreact with the surface of the modified atomic layer 902 a in aself-limiting way, so that the reaction terminates once the reactivesites on the surface of the modified atomic layer 902 a are consumed.The silicon-containing species from the second silicon-containingprecursor gas may be adsorbed onto the surface of the modified atomiclayer 902 b.

In some embodiments, silicon-containing species from the secondsilicon-containing precursor gas are adsorbed onto the surface of theatomic layer 902 a to form an atomic layer 902 b, as shown in FIG. 9B.In some embodiments, the second silicon-containing precursor gasincludes a silicon-carbon bonding. Therefore, the atomic layer 902 bcontains carbon, in accordance with some embodiments. In someembodiments, the atomic layer 902 b includes a silicon-carbon bonding.Once the reactive sites are completely or almost completely consumed,the growth of the atomic layer 902 b automatically terminates. Thethickness of the atomic layer 902 b may be a few angstroms. For example,the thickness of the atomic layer 902 b is in a range from about 2 Å toabout 10 Å. The excess portion of the second silicon-containingprecursor gas would not chemically bond with the surface of the atomiclayer 902 b after the reactive sites are consumed. In some embodiments,the excess portion of the second silicon-containing precursor gas and/orreaction byproducts are/is then removed from the process chamber 702.The excess portion of the second silicon-containing precursor gas and/orreaction byproducts may be removed by introducing a purge gas such asargon gas.

In some embodiments, the method 300 continues with an operation 308 inwhich one or more second modifying reactive media are introduced ontothe atomic layer 902 b formed in the operation 306. In some embodiments,the introduction of the one or more second modifying reactive mediaincludes introducing an oxygen-containing media, introducing anitrogen-containing media, and introducing a carbon-containing media.After multiple modification operations, the atomic layer 902 b ismodified to include reactive sites capable of reacting with subsequentlyintroduced precursor gas, which allows an atomic layer to be formeddirectly on the atomic layer 902 b later.

In some embodiments, an oxygen-containing media is introduced into theprocess chamber 702 to modify the atomic layer formed in the operation306. The oxygen-containing media may include oxygen gas,oxygen-containing plasma, ozone, or the like. The oxygen-containingmedia may react with the surface of the atomic layer in a self-limitingway, so that the reaction terminates once the reactive sites areconsumed. After the modification of the oxygen-containing media, theatomic layer is modified to include a silicon-oxygen bonding. Forexample, the surface of the atomic layer 902 b includes asilicon-halogen bonding, and the silicon-halogen bonding provided fromthe second silicon-containing precursor gas may react with theoxygen-containing media to become the silicon-oxygen bonding. After thereaction terminates once the reactive sites are consumed, the excessportion of the oxygen-containing media and/or reaction byproducts arethen removed from the process chamber 702, in accordance with someembodiments. The excess portion of the oxygen-containing media and/orreaction byproducts may be removed by introducing a purge gas such asargon gas.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the oxygen-containing media isnot used.

In some embodiments, a nitrogen-containing media is then introduced intothe process chamber 702 to modify the atomic layer 902 b. Thenitrogen-containing media may include nitrogen gas, nitrogen-containingplasma, or the like. The nitrogen-containing media may react with thesurface of the oxygen-modified atomic layer 902 b in a self-limitingway, so that the reaction terminates once the reactive sites areconsumed. After the modification of the nitrogen-containing media, theatomic layer 902 b is modified to include a silicon-nitrogen bonding.After the reaction terminates once the reactive sites are consumed, theexcess portion of the nitrogen-containing media and/or reactionbyproducts are then removed from the process chamber 702, in accordancewith some embodiments. The excess portion of the nitrogen-containingmedia and/or reaction byproducts may be removed by introducing a purgegas such as argon gas.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the nitrogen-containing media isnot used.

In some embodiments, a carbon-containing media is then introduced intothe process chamber 702 to modify the atomic layer 902 b. Thecarbon-containing media may include propane, methane, ethane, or thelike. The carbon-containing media may react with the surface of thenitrogen-modified atomic layer 902 b in a self-limiting way, so that thereaction terminates once the reactive sites are consumed. After themodification of the carbon-containing media, the atomic layer 902 b maybe modified to include a nitrogen-carbon bonding. After the reactionterminates once the reactive sites are consumed, the excess portion ofthe carbon-containing media and/or reaction byproducts are then removedfrom the process chamber 702, in accordance with some embodiments. Theexcess portion of the carbon-containing media and/or reaction byproductsmay be removed by introducing a purge gas such as argon gas.

Many variations and/or modifications can be made to embodiments of thedisclosure. The introducing order of the oxygen-containing media, thenitrogen-containing media, and the carbon-containing media may bevaried. In some other embodiments, the carbon-containing media is notused. In some other embodiments, no modifying reactive media is used.

In some embodiments, the method 300 continues with an operation 310 inwhich the deposition cycle from the operation 302 to the operation 308is repeated two or more times to form more atomic layers. In someembodiments, atomic layers 902 a′, 902 b′, 902 a″, and 902 b″ areformed, as shown in FIG. 9C. In some embodiments, the atomic layers 902a′ and 902 a″ are formed using the first silicon-containing precursorgas, and the atomic layers 902 b′ and 902 b″ are formed using the secondsilicon-containing precursor gas. The deposition cycle may be repeatedmore times to form more atomic layers. As a result, these atomic layerstogether form the sealing layer 108 with a desired thickness, as shownin FIGS. 9C and 2B. The thickness of the sealing layer 108 may be in arange from about 2 nm to about 20 nm. In some embodiments, the sealinglayer 108 contains silicon, oxygen, carbon, and nitrogen. In someembodiments, the sealing layer 108 is a SiOCN film.

In some embodiments, the second silicon-containing precursor gas has agreater atomic concentration of carbon than that of the firstsilicon-containing precursor gas. Therefore, the atomic layer (such asthe atomic layers 902 b, 902 b′, and 902 b″) formed using the secondsilicon-containing gas has a greater atomic concentration of carbon thanthat of the atomic layer (such as the atomic layers 902 a, 902 a′, and902 a″) formed using the first silicon-containing precursor gas. Due tothe greater atomic concentration of carbon, the atomic layers 902 b, 902b′ and 902 b″ may have a lower dielectric constant than that of theatomic layers 902 a, 902 a′, and 902 a″. The second silicon-containingprecursor gas may allow the formed sealing layer 108 to include a Si—Cbond and have a low dielectric constant. The dielectric constant of thesealing layer 108 may be in a range from about 1.5 to about 3.5.

However, in some cases, if a sealing layer is formed using the secondsilicon-containing precursor gas without using the firstsilicon-containing precursor gas, the obtained sealing layer may tend tobe oxidized by a subsequent water-involved annealing process and/ordamaged by an oxygen-based etching process. Moisture may be insertedinto the obtained sealing layer, which may result in a high dielectricconstant of the obtained sealing layer.

In some embodiments, the first silicon-containing precursor gas has alower atomic concentration of carbon than that of the secondsilicon-containing precursor gas. In some embodiments, the firstsilicon-containing precursor gas is substantially free of carbon.Therefore, the atomic layer (such as the atomic layers 902 a, 902 a′,and 902 a″) formed using the first silicon-containing gas has a greaterdielectric constant than that of the atomic layer (such as the atomiclayers 902 b, 902 b′ and 902 b″) formed using the secondsilicon-containing precursor gas. Although the atomic layers 902 a, 902a′ and 902 a″ may have a greater dielectric constant than that of theatomic layers 902 b, 902 b′ and 902 b″, the atomic layers 902 a, 902 a′and 902 a″ that have lower atomic concentration of carbon (or issubstantially free of carbon) have better oxidation resistance than theatomic layers 902 b, 902 b′ and 902 b″. The atomic layers 902 a, 902 a′,and 902 a″ may be used to prevent or reduce the oxidation of the atomiclayer 902 b. Moisture may be prevented from being inserted into thesealing layer 108 to increase the overall dielectric constant. The firstsilicon-containing precursor gas may allow the formed sealing layer 108to have high resistance to the subsequent oxygen-involved etchingprocess and/or water-involved annealing process. Therefore, thecombination of the atomic layers 902 a, 902 a′, and 902 a″ and theatomic layers 902 b, 902 b′ and 902 b″ may allow the formed sealinglayer 108 to have a low dielectric constant and good oxidationresistance to sustain subsequent processes. The dielectric constant ofthe sealing layer 108 is prevented from being decreased after thesubsequent processes.

As shown in FIG. 2C, lightly doped source and drain (LDS/D) regions 110are formed in the fin structure 102, in accordance with someembodiments. The LDS/D regions 110 are formed on opposite sides of thegate stack 107. In some embodiments, an ion implantation process 202 isused to form the LDS/D regions 110. The sealing layer 108 may help todetermine the edges of the formed LDS/D regions 110. In someembodiments, the implantation process 202 is performed at a tilt anglesuch that the formed LDS/D regions 110 extend towards the bottom of thegate stack 107.

As shown in FIG. 2D, a spacer layer 112 is deposited over the sealinglayer 108, in accordance with some embodiments. The spacer layer 112also extends along the sidewalls and top surfaces of the gate stack 107.In some embodiments, the spacer layer 112 is thicker than the sealinglayer 108. In some embodiments, the spacer layer 112 and the sealinglayer 108 are made of the same material. In some other embodiments, thespacer layer 112 and the sealing layer 108 are made of differentmaterials.

In some embodiments, the spacer layer 112 is made of a dielectricmaterial. The dielectric material may include silicon oxycarbonitride,silicon carbide, silicon oxynitride, silicon nitride, silicon oxide, oneor more other suitable materials, or a combination thereof. The spacerlayer 112 may be deposited using a chemical vapor deposition (CVD)process. In some embodiments, the spacer layer 112 is deposited using anALD process. In subsequent processes, the spacer layer 112 may suffer anoxygen-involved etching process and/or a water-involved annealingprocess. In some embodiments, the spacer layer 112 is formed to havestrong oxidation-resistance terminal ligand.

In some embodiments, two precursor gases are alternatively andsequentially used to form the spacer layer 112. One of the precursorgases may be used to provide the spacer layer 112 with the strongoxidation-resistance terminal ligand. Another precursor gas may be usedto provide the spacer layer 122 with a carbon-containing bonding (suchas a Si—C bonding), which may result in a low dielectric constant.Therefore, the spacer layer 112 may be prevented from being oxidized andstill have a relatively low dielectric constant. For example, the spacerlayer 112 has a lower dielectric constant than that of silicon dioxide.

In some embodiments, the spacer layer 112 is formed using a similar orthe same ALD process used for forming the sealing layer 108. In someembodiments, a third silicon-containing precursor gas and a fourthsilicon-containing precursor gas are alternately and sequentiallyintroduced into the same process chamber (i.e., the process chamber 702)to form the spacer layer 112. The method 300 illustrated in FIG. 3 maybe used to form the spacer layer 112. In some embodiments, the firstsilicon-containing precursor gas and the third silicon-containingprecursor gas have the same composition. In some embodiments, the secondsilicon-containing precursor gas and the fourth silicon-containingprecursor gas have the same composition. In some embodiments, the spacerlayer 112 is thicker than the sealing layer 108. The thickness of thespacer layer 112 may be in a range from about 4 nm to about 40 nm. Thethickness of the sealing layer 108 may be in a range from about 2 nm toabout 20 nm. In some embodiments, the deposition cycle from theoperation 302 to the operation 308 is repeated multiple times to formmultiple atomic layers. As a result, these atomic layers together formthe spacer layer 112 with the desired thickness.

As shown in FIG. 2E, the spacer layer 112 and the sealing layer 108 arepartially removed to form sealing elements 108′ and spacer elements112′, in accordance with some embodiments. In some embodiments, ananisotropic etching is used to partially remove the spacer layer 112 andthe sealing layer 108. As a result, the remaining portions of the spacerlayer 112 and the sealing layer 108 form the spacer elements 112′ andthe sealing elements 108′. In some embodiments, each or one of thespacer elements 112′ gradually shrinks along a direction extending fromthe bottom towards the top of the gate stack 107. In some embodiments,each or one of the sealing elements 108′ has an L-shape profile. Afterthe formation of the spacer element 112′ and the sealing element 108′,portions of the fin structure 102 including portions of the LDS/Dregions 110 are exposed, as shown in FIG. 2E.

As shown in FIG. 2F, the fin structure 102 is partially removed to forma recess, in accordance with some embodiments. In some embodiments, aportion of the fin structure 102 is recessed to be lower than the topsurfaces of the isolation features 103 shown in FIG. 1. In someembodiments, an etching process is performed to remove an upper portionof the fin structure 102. As a result, the recesses are formed. In someother embodiments, multiple etching operations are used so that therecesses further extend laterally towards channel regions below the gatestack 107. During the etching process, the LDS/D regions 110 may also bepartially removed. As shown in FIG. 2F, the remaining portions of theLDS/D regions 110 are positioned between the sidewalls of the recessesand the channel region under the gate stack 107.

Afterwards, source/drain structures 114 are formed to fill or overfillthe recesses, as shown in FIG. 2F in accordance with some embodiments.In some embodiments, the source/drain structures 114 protrude from thetop surfaces of the isolation features 103 shown in FIG. 1. In someembodiments, a semiconductor material (or two or more semiconductormaterials) is epitaxially grown over the fin structure 102 that isrecessed to fill or overfill the recesses, growing continually to abovethe recesses, to form the source/drain structures 114.

In some embodiments, the source/drain structures 114 are made of ap-type semiconductor material. For example, the source/drain structures114 may include epitaxially grown silicon germanium. The source/drainstructures 114 are not limited to being made of a p-type semiconductormaterial. In some embodiments, the source/drain structures 114 are madeof an n-type semiconductor material. The source/drain structures 114 mayinclude epitaxially grown silicon, epitaxially grown silicon carbide(SiC), epitaxially grown silicon phosphide (SiP), or another suitableepitaxially grown semiconductor material.

In some embodiments, the source/drain structures 114 are formed using aselective epitaxy growth (SEG) process, a CVD process (e.g., avapor-phase epitaxy (VPE) process, a low pressure chemical vapordeposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD)process), a molecular beam epitaxy process, one or more other applicableprocesses, or a combination thereof. The formation process of thesource/drain structures 114 may use gaseous and/or liquid precursors.

In some embodiments, the source/drain structures 114 include dopants. Insome embodiments, the source/drain structures 114 are doped in-situduring the growth of the source/drain structures 114. In some otherembodiments, the source/drain structures 114 are not doped during thegrowth of the source/drain structures 114. After the epitaxial growth,the source/drain structures 114 are doped in a subsequent process. Insome embodiments, the doping is achieved using an ion implantationprocess, a plasma immersion ion implantation process, a gas and/or solidsource diffusion process, one or more other applicable processes, or acombination thereof. In some embodiments, the source/drain structures114 are further exposed to one or more annealing processes to activatethe dopants. For example, a rapid thermal annealing process is used.

As shown in FIG. 2G, a dielectric layer 116 is formed over the finstructure 102, the source/drain structures 114, and the isolationfeature 103 (shown in FIG. 1) to surround the gate stack 107, inaccordance with some embodiments. In some embodiments, the dielectriclayer 116 is made of or includes silicon oxide, silicon oxynitride,borosilicate glass (BSG), phosphoric silicate glass (PSG),borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG),low-k material, porous dielectric material, one or more other suitabledielectric materials, or a combination thereof. In some embodiments, thedielectric layer 116 is deposited using a CVD process, an ALD process, aPVD process, a spin-on process, one or more other applicable processes,or a combination thereof.

In some embodiments, a flowable chemical vapor deposition (FCVD) processis used to form the dielectric layer 116. In some embodiments, thedielectric layer 116 is formed of flowable silicon dioxide (SiO₂). Inthe FCVD process, a silicon-containing precursor (e.g., an organicsilane) may react with an oxygen-containing precursor (e.g. one or moreof oxygen, ozone, and nitrogen oxides) to form the dielectric layer 116.The dielectric layer 116 may have a substantially high concentration ofsilicon-hydroxide (Si—OH) bonds. The bonds may promote and/or optimizethe flowability (or mobility) of silicon oxide material of thedielectric layer 116. Therefore, the silicon oxide material may rapidlymove into gaps and/or trenches on the semiconductor substrate 100 and/oron the elements already positioned on the semiconductor substrate 100.

In some embodiments, the formation of the dielectric layer 116 involvesa curing process. The curing process may involve exposing the flowabledielectric material to an oxygen-containing media such as deionizedwater and/or ozone (O₃). The sealing element 108′ and/or the spacerelement 112′ may have high resistance to the oxygen-containing media.The water is prevented from inserting into the sealing element 108′and/or the spacer element 112′. The sealing element 108′ and/or thespacer element 112′ may still have a low dielectric constant.

In the curing process, the flow rate of ozone may be in a range fromabout 100 sccm to about 5000 sccm, the process temperature may be in arange from about 10 degrees Celsius to about 500 degrees Celsius, andthe process pressure may be in a range from about 1 torrs to about 760torrs. Many variations and/or modifications can be made to embodimentsof the disclosure. In some embodiments, the flow rate of ozone is in arange from about 1000 sccm to about 3000 sccm. In some embodiments, theprocess temperature is in a range from about 50 degrees Celsius to about300 degrees Celsius. In some embodiments, the process pressure is in arange from about 50 torrs to about 500 torrs. The curing process maytransform Si—O bond networks in the flowable dielectric material. As aresult, the density of the flowable dielectric material may beincreased.

In some embodiments, the formation of the dielectric layer 116 involvesan annealing process. The annealing process may include a steamannealing process, a dry annealing process, a plasma annealing process,an ultraviolet (UV) annealing process, an electron beam annealingprocess, a microwave annealing process, one or more other applicableprocesses, or a combination thereof.

In some embodiments, organic silane or the like is used as a source gasin the process of forming the dielectric layer 116, such that asubstantial amount of carbon coming from the organic silane may beintroduced to the dielectric layer 116 to form, for example, Si—C bondsand/or Si—O—C bonds. For example, the organic silane includestetraethoxysilane, tetramethyldisiloxane, or another suitablecarbon-containing silane. The annealing process may include a steamannealing process for replacing some Si—C bonds with Si—OH bonds in thedielectric layer 116. In the steam annealing process, the flow rate ofwater vapor may be in a range of 5 sccm to 20 sccm, and the processtemperature may be in a range of 400 degrees Celsius to 600 degreesCelsius. Subsequently, a dry annealing process may be performed on thedielectric layer 116 in a water-free atmosphere, e.g., in a dry nitrogenatmosphere, to convert the Si—OH bonds into Si—O—Si bonds and to removemoisture from the dielectric layer 116.

Afterwards, the dielectric layer 116 is thinned down until the gatestack 107 is exposed, as shown in FIG. 2G in accordance with someembodiments. In some embodiments, the dielectric layer 116 is thinneddown using a planarization process. The planarization process mayinclude a chemical mechanical polishing (CMP) process, a grindingprocess, an etching process, a dry polishing process, one or more otherapplicable processes, or a combination thereof.

As shown in FIG. 2H, the gate stack 107 is removed to form a trench 118,as shown in FIG. 2H in accordance with some embodiments. The trench 118exposes a portion of the fin structure 102 that is originally covered bythe gate stack 107 (shown in FIG. 2G). The trench 118 may also exposeportions of the isolation features 103. In some embodiments, the trench118 is surrounded by the sealing elements 108′, the spacer elements112′, and the dielectric layer 116. In some embodiments, the gate stack107 is removed using a dry etching process, a wet etching process, oneor more other applicable processes, or a combination thereof. In someembodiments, the gate stack 107 is removed using oxygen-containingplasma. The sealing element 108′ may have high resistance to theoxygen-containing plasma.

As shown in FIG. 2I, a metal gate stack 130 is formed in the trench 118,in accordance with some embodiments. In some embodiments, metal gatestack layers are formed to overfill the trench 118. The metal gate stacklayers may include a gate dielectric layer, a barrier layer, a workfunction layer, a blocking layer, and/or a metal filling layer.

In some embodiments, a gate dielectric layer 120 is deposited over thesidewalls and bottom of the trench 118, in accordance with someembodiments. In some embodiments, the gate dielectric layer 120 is madeof or includes a high-k dielectric layer. The high-k dielectric layermay be made of hafnium oxide, zirconium oxide, aluminum oxide, hafniumdioxide-alumina alloy, hafnium silicon oxide, hafnium siliconoxynitride, hafnium tantalum oxide, hafnium titanium oxide, hafniumzirconium oxide, another suitable high-K material, or a combinationthereof. In some embodiments, the gate dielectric layer 120 is depositedusing an ALD process, a CVD process, a spin-on process, one or moreother applicable processes, or a combination thereof. In someembodiments, a high temperature annealing operation is used to reduce oreliminate defects in the gate dielectric layer 120.

In some other embodiments, before the gate dielectric layer 120 isformed, an interfacial layer (not shown) is formed in the trench 118.The interfacial layer may be used to reduce stress between the gatedielectric layer 120 and the fin structure 102. In some embodiments, theinterfacial layer is made of or includes silicon oxide. In someembodiments, the interfacial layer is formed using an ALD process, athermal oxidation process, one or more other applicable processes, or acombination thereof.

Afterwards, a barrier layer 122 is deposited over the gate dielectriclayer 120, in accordance with some embodiments. The barrier layer 122may be used to interface the gate dielectric layer 120 with subsequentlyformed work function layers. The barrier layer 122 may also be used toprevent diffusion between the gate dielectric layer 120 and thesubsequently formed work function layers.

In some embodiments, the barrier layer 122 is made of or includes ametal-containing material. The metal-containing material may includetitanium nitride, tantalum nitride, one or more other suitablematerials, or a combination thereof. In some embodiments, the barrierlayer 122 includes multiple sub-layers. The sub-layers may be made ofdifferent materials. Alternatively, the sub-layers may be made of thesame material. In some embodiments, the barrier layer 122 is depositedusing an ALD process, a CVD process, a PVD process, an electroplatingprocess, an electroless plating process, one or more other applicableprocesses, or a combination thereof. In some other embodiments, thebarrier layer 122 is not formed.

Afterwards, a work function layer 124 is formed over the barrier layer122, in accordance with some embodiments. The work function layer 124 isused to provide desired work function for transistors to enhance deviceperformance including improved threshold voltage. In the embodiments offorming an NMOS transistor, the work function layer can be an n-typemetal layer. The n-type metal layer is capable of providing a workfunction value suitable for the device, such as equal to or less thanabout 4.5 eV. The n-type metal layer may include metal, metal carbide,metal nitride, or a combination thereof. For example, the n-type metallayer is made of or includes titanium nitride, tantalum, tantalumnitride, one or more other suitable materials, or a combination thereof.

On the other hand, in the embodiments of forming a PMOS transistor, thework function layer can be a p-type metal layer. The p-type metal layeris capable of providing a work function value suitable for the device,such as equal to or greater than about 4.8 eV. The p-type metal layermay include metal, metal carbide, metal nitride, other suitablematerials, or a combination thereof. For example, the p-type metalincludes tantalum nitride, tungsten nitride, titanium, titanium nitride,one or more other suitable materials, or a combination thereof.

The work function layer may also be made of or include hafnium,zirconium, titanium, tantalum, aluminum, metal carbides (e.g., hafniumcarbide, zirconium carbide, titanium carbide, aluminum carbide),aluminides, ruthenium, palladium, platinum, cobalt, nickel, conductivemetal oxides, or a combinations thereof. The thickness and/or thecompositions of the work function layer may be fine-tuned to adjust thework function level. For example, a titanium nitride layer may be usedas a p-type metal layer or an n-type metal layer, depending on thethickness and/or the compositions of the titanium nitride layer.

Afterwards, a blocking layer 126 is deposited over the work functionlayer 124, in accordance with some embodiments. The blocking layer 126may be used to prevent a subsequently formed metal filling layer fromdiffusing or penetrating into the work function layers. In someembodiments, the blocking layer 126 is made of or includes tantalumnitride, titanium nitride, one or more other suitable materials, or acombination thereof. In some embodiments, the blocking layer 126 isdeposited using an ALD process, a CVD process, a PVD process, anelectroplating process, an electroless plating process, one or moreother applicable processes, or a combination thereof. Embodiments of thedisclosure are not limited thereto. In some other embodiments, theblocking layer 126 is not formed.

Afterwards, a metal filling layer 128 is deposited over the blockinglayer 126 to fill the trenches 118, in accordance with some embodiments.In some embodiments, the metal filling layer 128 is made of or includestungsten, aluminum, copper, cobalt, one or more other suitablematerials, or a combination thereof. In some embodiments, the metalfilling layer 128 is deposited using a PVD process, a CVD process, anelectroplating process, an electroless plating process, one or moreother applicable processes, or a combination thereof. Many variationsand/or modifications can be made to embodiments of the disclosure. Insome other embodiments, the metal filling layer 128 is not formed.

In some embodiments, these metal gate stack layers overfill the trench118 and cover the dielectric layer 116. In some embodiments, theportions of the metal gate stack layers outside of the trench 118 areremoved. As a result, a metal gate stack 130 is formed in the trench118. In some embodiments, a planarization process is used to remove theportions of the metal gate stack layers outside of the trench 118 untilthe dielectric layer 116 is exposed. The planarization process mayinclude a CMP process, an etching process, a dry polishing process, agrinding process, one or more other applicable processes, or acombination thereof.

FIG. 4 is a cross-sectional view of a portion of the sealing element108′ and a spacer element 112′ near the metal gate stack 130, inaccordance with some embodiments. In some embodiments. FIG. 4 is anenlarged cross-sectional view of the structure shown in FIG. 2I. Thesealing element 108′ may have a thickness that is in a range from about2 nm to about 20 nm. The spacer element 112′ may have a thickness thatis in a range from about 4 nm to about 40 nm. In some embodiments, themethod 300 is used to form the sealing element 108′ and/or the spacerelement 112′. In these cases, the sealing element 108′ and/or the spacerelement 112′ may have a substantially uniform atomic concentration ofcarbon.

In some embodiments, the sealing element 108′ includes atomic layersformed by alternatively and sequentially using the firstsilicon-containing precursor gas and the second silicon-containingprecursor gas. As mentioned above, each of the atomic layers formedusing the first silicon-containing precursor gas or the secondsilicon-containing precursor gas may have a thickness that is in a rangefrom about 2 Å to about 10 Å. In some embodiments, the spacer element112′ have a structure similar to that of the sealing element 108′. Thedeposition cycle may be repeated more times to form the spacer element112′ with a greater thickness than the sealing element 108′.

FIG. 5 is a cross-sectional view of a portion of the sealing element108′ or the spacer element 112′ near the metal gate stack 130, inaccordance with some embodiments. In some embodiments, the sealingelement 108′ has a first portion 502 a and a second portion 502 b. Insome embodiments, the first portion 502 a is between the second portion502 b and the metal gate stack 130. In some embodiments, the spacerelement 112′ has a first portion 504 a and a second portion 504 b. Thefirst portion 504 a is between the second portion 504 b and the metalgate stack 130.

In some embodiments, the formation of the first portion 502 a of thesealing element 108′ or the first portion 504 a of the spacer element112′ involves repeatedly introducing the first silicon-containingprecursor gas. In some embodiments, the modifying reactive media isintroduced between introducing the first silicon-containing precursorgas and introducing the first silicon-containing precursor gas again.The first portion 502 a of the sealing element 108′ or the first portion504 a of the spacer element 112′ includes a stack of multiple atomiclayers formed using the first silicon-containing precursor gas. In someembodiments, the interfaces between these atomic layers are notdetectable. FIGS. 8A and 8B are flow charts of a method for forming asealing layer or a spacer layer using an atomic layer depositionprocess, in accordance with some embodiments. In some embodiments, theoperations 302 and 304 are repeated multiple times until the firstportion 502 a of a desired thickness has been formed, as shown in FIG.8A.

In some embodiments, the formation of the second portion 502 b of thesealing element 108′ or the second portion 504 b of the spacer element112′ involves repeatedly introducing the second silicon-containingprecursor gas. In some embodiments, the modifying reactive media isintroduced between introducing the second silicon-containing precursorgas and introducing the second silicon-containing precursor gas again.The second portion 502 b of the sealing element 108′ or the firstportion 504 a of the spacer element 112′ includes a stack of multipleatomic layers formed using the first silicon-containing precursor gas.In some embodiments, the interfaces between these atomic layers are notdetectable. In some embodiments, the operations 306 and 308 are repeatedmultiple times until the second portion 502 a of a desired thickness hasbeen formed, as shown in FIG. 8B.

In some embodiments, the second portion 502 b has a different atomicconcentration of carbon than that of the first portion 502 a. In someembodiments, the second portion 504 b has a different atomicconcentration of carbon than that of the first portion 504 a. In someembodiments, the second portion 502 b has a greater atomic concentrationof carbon than that of the first portion 502 a. In some embodiments, thesecond portion 504 b has a greater atomic concentration of carbon thanthat of the first portion 504 a. In some embodiments, the first portions502 a and 504 a are formed using the first silicon-containing precursorgas that is substantially free of carbon. In some embodiments, the firstportions 502 a and 504 a are also substantially free of carbon.

In some other embodiments, the modifying reactive media introducedbetween introducing the first silicon-containing precursor gas andintroducing the first silicon-containing precursor gas again includescarbon. In these cases, the first portions 502 a and 504 a may alsoinclude carbon. The atomic concentration of carbon of the first portion502 a or 504 a is smaller than that of the second portion 502 b or 504 bformed using the second silicon-containing precursor gas including aSi—C bonding. In some embodiments, the ratio of carbon contained in thefirst portion 502 a (or 504 a) to carbon contained in the second portion502 b (or 504 b) is in a range from about 0.5 to about 0.9.

In some embodiments, the first portion 502 a (or 504 a) includes atomiclayers that are formed using the first silicon-containing precursor gassubstantially free of carbon. In some embodiments, the first portion 502a (or 504 a) includes no Si—C bonding. The second portion 502 b (or 504b) includes atomic layers that are formed using the secondsilicon-containing precursor gas containing a Si—C bonding. The secondportion 502 b (or 504 b) has a greater atomic concentration of carbonthan that of the first portion 502 a (or 504 a). Due to higher carboncontent, the second portion 502 b (or 504 b) may contribute a lowerdielectric constant of the sealing element 108′ (or the spacer element112′). The first portion 502 a (or 504 a) that includes no Si—C bondingmay have better oxidation resistance to the second portion 502 b (or 504b). Therefore, the first portion 502 a (or 504 a) may protect the secondportion 502 b (or 504 b) from being oxidized or damaged duringsubsequent processes such as the water-involved annealing process forforming the dielectric layer 116 (in FIG. 2G) and the oxygen-containingplasma treatment for removing the gate stack 107 (in FIG. 2H).

FIG. 6 is a cross-sectional view of a portion of a sealing element of asemiconductor device structure, in accordance with some embodiments. Insome embodiments, the sealing element 108′ includes a stack of multiplefirst portions 602 a and multiple second portions 602 b. In someembodiments, each of the first portions 602 a has a similar or the samecomposition of the first portion 502 a as illustrated in FIG. 5. In someembodiments, each of the second portions 602 b has a similar or the samecomposition of the second portion 502 b as illustrated in FIG. 5. Insome embodiments, the methods illustrated in FIGS. 8A and 8B may berepeated multiple times to form the structure shown in FIG. 6. In someembodiments, the spacer elements 112′ may also have a similar structureas shown in FIG. 6.

Embodiments of the disclosure form a sealing element and/or a spacerelement over sidewalls of a gate stack using an atomic layer depositionprocess. A first silicon-containing precursor gas and a secondsilicon-containing gas are alternately and sequentially introduced toform a material layer for forming the sealing element or the spacerelement. The second silicon-containing precursor gas may have a greateratomic concentration of carbon than that of the first silicon-containingprecursor gas. The second silicon-containing precursor gas may allow thematerial layer to have a low dielectric constant. The firstsilicon-containing precursor gas may allow the material layer to havehigh resistance to the subsequent oxygen-involved etching process and/orwater-involved annealing process. For example, the secondsilicon-containing precursor gas includes a silicon-carbon bonding, andthe first silicon-containing precursor gas does not include anysilicon-carbon bonding. The first silicon-containing precursor gases maybe used to provide the sealing layer and/or the spacer layer with thestrong oxidation-resistance terminal ligand. The secondsilicon-containing precursor gas may be used to provide the sealinglayer and/or the spacer layer with a carbon-containing bonding (such asa Si—C bonding), which may result in a low dielectric constant.Therefore, a sealing element and/or a spacer element having a lowdielectric constant and good oxidation resistance to sustain subsequentprocesses are obtained. The process feasibility and process window areimproved.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga gate stack over a semiconductor substrate. The method also includesforming a sealing layer over a sidewall of the gate stack using anatomic layer deposition process. The atomic layer deposition processincludes alternately and sequentially introducing a firstsilicon-containing precursor gas and a second silicon-containingprecursor gas over the sidewall of the gate stack to form the sealinglayer. The second silicon-containing precursor gas has a differentatomic concentration of carbon than that of the first silicon-containingprecursor gas. The method further includes partially removing thesealing layer to form a sealing element over the sidewall of the gatestack. In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga gate stack over a semiconductor substrate. The method also includesforming a sealing layer over a sidewall of the gate stack using anatomic layer deposition process. The atomic layer deposition processincludes repeatedly introducing a first silicon-containing precursor gasover the sidewall of the gate stack to form a first portion of thesealing layer. The atomic layer deposition process also includesrepeatedly introducing a second silicon-containing precursor gas overthe sidewall of the gate stack to form a second portion of the sealinglayer over the first portion of the sealing layer. The secondsilicon-containing precursor gas has a different atomic concentration ofcarbon than that of the first silicon-containing precursor gas. Themethod further includes partially removing the sealing layer to form asealing element over the sidewall of the gate stack.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a gate stack over the semiconductor substrate. Thesemiconductor device structure also includes a sealing element over asidewall of the gate stack. The sealing element has a first portion anda second portion. The first portion is between the second portion andthe sidewall of the gate stack. The second portion has a differentatomic concentration of carbon than that of the first portion.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga gate stack over a semiconductor substrate. The method also includesforming a sealing layer over a sidewall of the gate stack using anatomic layer deposition process. The atomic layer deposition processincludes alternately and sequentially introducing a firstsilicon-containing precursor gas and a second silicon-containingprecursor gas over the sidewall of the gate stack to form the sealinglayer. The second silicon-containing precursor gas includes asilicon-carbon bonding, and the first silicon-containing precursor gasdoes not include any silicon-carbon bonding. The method further includespartially removing the sealing layer to form a sealing element over thesidewall of the gate stack.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a semiconductor devicestructure, comprising: forming a gate stack over a semiconductorsubstrate; forming a sealing layer over a sidewall of the gate stackusing an atomic layer deposition process in a process chamber, whereinthe atomic layer deposition process comprises: alternately andsequentially introducing a first silicon-containing precursor gas and asecond silicon-containing precursor gas over the sidewall of the gatestack to form the sealing layer, wherein the second silicon-containingprecursor gas has a different atomic concentration of carbon than thatof the first silicon-containing precursor gas, and removing an excessportion of the first silicon-containing precursor gas from the processchamber before the second silicon-containing gas is introduced; andpartially removing the sealing layer to form a sealing element over thesidewall of the gate stack.
 2. The method for forming a semiconductordevice structure as claimed in claim 1, wherein the secondsilicon-containing precursor gas has a greater atomic concentration ofcarbon than that of the first silicon-containing precursor gas.
 3. Themethod for forming a semiconductor device structure as claimed in claim1, further comprising: introducing at least one first modifying reactivemedia after removing the excess portion of the first silicon-containingprecursor gas from the process chamber and before introducing the secondsilicon-containing precursor gas; and introducing at least one secondmodifying reactive media after introducing the second silicon-containingprecursor gas and before introducing the first silicon-containingprecursor gas again.
 4. The method for forming a semiconductor devicestructure as claimed in claim 3, wherein introducing the at least onefirst modifying reactive media comprises: introducing anoxygen-containing media; introducing a nitrogen-containing media; andintroducing a carbon-containing media.
 5. The method for forming asemiconductor device structure as claimed in claim 3, whereinintroducing the at least one second modifying reactive media comprises:introducing an oxygen-containing media; introducing anitrogen-containing media; and introducing a carbon-containing media. 6.The method for forming a semiconductor device structure as claimed inclaim 1, wherein the first silicon-containing precursor gas comprises asilicon-halogen bonding, a silicon-nitrogen bonding, a silicon-hydrogenbonding, or a combination thereof.
 7. The method for forming asemiconductor device structure as claimed in claim 1, wherein the secondsilicon-containing precursor gas comprises a silicon-carbon bonding. 8.The method for forming a semiconductor device structure as claimed inclaim 7, wherein the second silicon-containing precursor gas furthercomprises a silicon-halogen bonding, a silicon-nitrogen bonding, asilicon-hydrogen bonding, or a combination thereof.
 9. The method forforming a semiconductor device structure as claimed in claim 1, furthercomprising: forming a lightly doped region under the sealing layer;forming a spacer layer over the sealing layer; and partially removingthe spacer layer to form a spacer element over the sealing element. 10.The method for forming a semiconductor device structure as claimed inclaim 9, wherein the spacer layer is formed using a second atomic layerdeposition process, wherein the second atomic layer deposition processcomprises alternately and sequentially introducing a thirdsilicon-containing precursor gas and a fourth silicon-containingprecursor gas over the sidewall of the gate stack to form the spacerlayer, wherein the fourth silicon-containing precursor gas has adifferent atomic concentration of carbon than that of the thirdsilicon-containing precursor gas.
 11. The method for forming asemiconductor device structure as claimed in claim 10, wherein the firstsilicon-containing precursor gas and the third silicon-containingprecursor gas have the same composition, and the secondsilicon-containing precursor gas and the fourth silicon-containingprecursor gas have the same composition.
 12. A method for forming asemiconductor device structure, comprising: forming a gate stack over asemiconductor substrate; forming a sealing layer over a sidewall of thegate stack using an atomic layer deposition process in a processchamber, wherein the atomic layer deposition process comprises:repeatedly introducing a first silicon-containing precursor gas over thesidewall of the gate stack to form a first portion of the sealing layer,removing an excess portion of the first silicon-containing precursor gasfrom the process chamber before the first silicon-containing precursorgas is introduced again, and repeatedly introducing a secondsilicon-containing precursor gas over the sidewall of the gate stack toform a second portion of the sealing layer over the first portion of thesealing layer, wherein the second silicon-containing precursor gas has adifferent atomic concentration of carbon than that of the firstsilicon-containing precursor gas; and partially removing the sealinglayer to form a sealing element over the sidewall of the gate stack. 13.The method for forming a semiconductor device structure as claimed inclaim 12, further comprising: introducing at least one first modifyingreactive media after removing the excess portion of the firstsilicon-containing precursor gas from the process chamber and beforeintroducing the first silicon-containing precursor gas again; andintroducing at least one second modifying reactive media afterintroducing the second silicon-containing precursor gas and beforeintroducing the second silicon-containing precursor gas again.
 14. Themethod for forming a semiconductor device structure as claimed in claim13, wherein introducing the at least one first modifying reactive mediacomprises: introducing an oxygen-containing media; introducing anitrogen-containing media; and introducing a carbon-containing media.15. The method for forming a semiconductor device structure as claimedin claim 13, wherein introducing the at least one second modifyingreactive media comprises: introducing an oxygen-containing media;introducing a nitrogen-containing media; and introducing acarbon-containing media.
 16. The method for forming a semiconductordevice structure as claimed in claim 12, further comprising forming aspacer layer over the sealing layer using a second atomic layerdeposition process, and the second atomic layer deposition processcomprises repeatedly introducing a third silicon-containing precursorgas over the sidewall of the gate stack to form a first portion of thespacer layer over the second portion of the sealing layer; andrepeatedly introducing a fourth silicon-containing precursor gas overthe sidewall of the gate stack to form a second portion of the spacerlayer over the first portion of the spacer layer, wherein the fourthsilicon-containing precursor gas has a different atomic concentration ofcarbon than that of the third silicon-containing precursor gas.
 17. Themethod for forming a semiconductor device structure as claimed in claim16, wherein the third silicon-containing precursor gas and the firstsilicon-containing precursor gas have the same composition.
 18. Themethod for forming a semiconductor device structure as claimed in claim12, further comprising alternately and sequentially introducing a thirdsilicon-containing precursor gas and a fourth silicon-containingprecursor gas over the sidewall of the gate stack to form a spacer layerover the sealing layer, wherein the fourth silicon-containing precursorgas has a different atomic concentration of carbon than that of thethird silicon-containing precursor gas.
 19. A method for forming asemiconductor device structure, comprising: forming a gate stack over asemiconductor substrate; forming a sealing layer over a sidewall of thegate stack using an atomic layer deposition process in a processchamber, wherein the atomic layer deposition process comprises:alternately and sequentially introducing a first silicon-containingprecursor gas and a second silicon-containing precursor gas for at leasttwice over the sidewall of the gate stack to form the sealing layer,wherein the second silicon-containing precursor gas includes asilicon-carbon bonding, and the first silicon-containing precursor gasdoes not include any silicon-carbon bonding; and partially removing thesealing layer to form a sealing element over the sidewall of the gatestack.
 20. The method for forming a semiconductor device structure asclaimed in claim 19, further comprising: introducing at least one firstmodifying reactive media after introducing the first silicon-containingprecursor gas and before introducing the second silicon-containingprecursor gas; and introducing at least one second modifying reactivemedia after introducing the second silicon-containing precursor gas andbefore introducing the first silicon-containing precursor gas again.